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參數(shù)資料
| 型號： | NZT902 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Low Saturation Transistor |
| 中文描述： | 3 A, 90 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 182K |
| 代理商： | NZT902 |
2006 Fairchild Semiconductor Corporation
NZT902 Rev. B
1
www.fairchildsemi.com
N
tm
September 2006
NZT902
NPN Low Saturation Transistor
These devices are designed with high current gain and
low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T
a
=25
°
C
unless otherwise noted
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm.
Electrical Characteristics*
T
a
= 25°C unless otherwise noted
Symbol
Parameter
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
90
V
Collector-Base Voltage
120
V
Emitter-Base Voltage
5
V
Collector Current
- Continuous
3
A
Junction Temperature
150
°
C
Storage Temperature Range
- 55 ~ +150
°
C
Symbol
Parameter
Value
Units
P
D
R
θ
JA
Total Device Dissipation
1
W
Thermal Resistance, Junction to Ambient
125
°
C/W
Test Conditions
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA
90
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 100
μ
A
120
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 100
μ
A
5
V
I
CBO
Collector-Base Cutoff Current
V
CB
= 100V
V
CB
= 100V, Ta = 100
°
C
100
10
nA
uA
I
EBO
Emitter-Base Cutoff Current
V
EB
= 4V
100
nA
h
FE
DC Current Gain
I
C
= 0.1A, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
80
80
25
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 0.1A, I
B
= 5.0mA
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
50
250
600
mV
mV
mV
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 1A, I
B
= 100mA
1.25
V
C
obo
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1MHz
35
pF
f
T
Transition Frequency
I
C
= 100mA, V
CE
= 5V, f = 100MHz
75
MHz
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter
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