參數(shù)資料
型號： NZT749
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： PNP Current Driver Transistor
中文描述： 4 A, 25 V, PNP, Si, POWER TRANSISTOR
封裝： SOT-223, 4 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 38K
代理商： NZT749
2004 Fairchild Semiconductor Corporation
Rev. A, July 2004
N
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Voltage
V
(BR)CBO
Collector-Base Voltage
V
(BR)EBO
Emitter-Base Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
On Characteristics *
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Thermal Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
Parameter
Value
-25
-35
-5.0
-4.0
- 55 ~ 150
Units
V
V
V
A
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= -10mA, I
B
= 0
I
C
= -100
μ
A, I
E
= 0
I
E
= -10
μ
A, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -4V, I
C
= 0
-25
-35
-5.0
V
V
V
nA
μ
A
-100
-0.1
V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -1.0A
V
CE
= -2.0V, I
C
= -2.0A
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, V
CE
= -2.0V
70
80
65
300
V
CE(sat)
V
BE(sat)
V
BE(on)
Small Signal Characteristics
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
-0.3
-1.25
-1.0
V
V
V
Current gain Bandwidth Product
V
CE
= -5.0V, I
C
= -50mA
f = 100MHz
75
MHz
Parameter
Max.
1.2
9.7
103
Units
W
mW/
°
C
°
C/W
NZT749
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuit where speed is important.
Sourced from process 5P.
1. Base 2, 4. Collector 3. Emitter
SOT-223
1
2
4
3
相關(guān)PDF資料
PDF描述
NZT751 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT00; No. of Contacts:18; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle
NZT753 PNP Current Driver Transistor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NZT749_Q 功能描述:兩極晶體管 - BJT PNP Transistor Current Driver RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT751 功能描述:兩極晶體管 - BJT PNP Transistor Current Driver RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT751_Q 功能描述:兩極晶體管 - BJT PNP Transistor Current Driver RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT753 功能描述:兩極晶體管 - BJT PNP Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT753_NL 功能描述:兩極晶體管 - BJT PNP Power transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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