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參數(shù)資料
| 型號： | NZQA5V6AXV5T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Capacitance Quad TVS Array for ESD Protection(用于進行ESD保護的低電容四TVS陣列) |
| 中文描述： | 20 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 463B-01, 5 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | NZQA5V6AXV5T1 |
NZQA5V6AXV5 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
UniDirectional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ T
A
= 25
°
C) (Note 1)
P
PK
20
W
Steady State Power 1 Diode (Note 2)
P
D
380
mW
Thermal Resistance Junction to Ambient
Above 25
°
C, Derate
R
JA
327
3.05
°
C/W
mW/
°
C
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
55 to +150
°
C
Lead Solder Temperature (10 seconds duration)
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Device
Marking
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
V
C
Max @ I
PP
Typ Capacitance
@ 0 V Bias (pF)
(Note 3)
Typ Capacitance
@ 3 V Bias (pF)
(Note 3)
Device
Min
Nom
Max
V
RWM
I
RWM
( A)
V
C
(V)
I
PP
(A)
Typ
Max
Typ
Max
NZQA5V6AXV5
5P
5.3
5.6
5.9
3.0
1.0
13
1.6
13
17
7.0
11.5
NZQA6V8AXV5
6H
6.1
6.8
7.2
3.0
1.0
13
1.6
12
15
6.7
9.5
1. Nonrepetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NZQA6V8AXV5T1 | Low Capacitance Quad TVS Array for ESD Protection(用于進行ESD保護的低電容四TVS陣列) |
| NZQA5V6AXV5 | Low Capacitance Quad TVS Array for ESD Protection(用于進行ESD保護的低電容四TVS陣列) |
| NZQA6V8AXV5 | Low Capacitance Quad Array for ESD Protection(用于進行ESD保護的低容抗方形陣列) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NZQA5V6AXV5T1G | 功能描述:TVS二極管陣列 Low Cap. TVS Quad Array for ESD RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NZQA5V6XV5T1 | 功能描述:TVS二極管陣列 Quad TVS Array for RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NZQA5V6XV5T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Quad TVS Array for ESD Protection |
| NZQA5V6XV5T1G | 功能描述:TVS二極管陣列 Quad TVS Array for ESD Protection RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NZQA5V6XV5T3 | 功能描述:TVS二極管陣列 Quad TVS Array for RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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