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參數(shù)資料
| 型號： | NUS3045MNT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 電源管理 |
| 英文描述： | Overvoltage Protection IC with Integrated MOSFET |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, DSO8 |
| 封裝： | 3.30 X 3.30 MM, LEAD FREE, DFN-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 138K |
| 代理商： | NUS3045MNT1G |
NUS2045MN, NUS3045MN
http://onsemi.com
3
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise stated)
Rating
Pin
Symbol
Min
Max
Unit
OUT Voltage to GND
7
V
O
0.3
30
V
Input and CNTRL Pin Voltage to GND
1
3
V
input
V
CNTRL
0.3
0.3
30
13
V
V
CC
Maximum Range
8
V
CC(max)
0.3
30
V
Maximum Power Dissipation
(
Note 1
)
P
D
1.0
W
Thermal Resistance JunctiontoAir
(
Note 1
)
OVP IC
PChannel FET
R
θ
JA
108.6
104.3
°
Junction Temperature
T
J
150
°
C
Operating Ambient Temperature
T
A
40
85
°
C
V
CNTRL
Operating Voltage
3
0
5.0
V
Storage Temperature Range
T
stg
65
150
°
C
ESD Performance (HBM)
(
Note 2
)
1,2,3,7,8,10
2.5
kV
DraintoSource Voltage
NUS2045MN
NUS3045MN
V
DSS
20
30
V
GatetoSource Voltage
NUS2045MN
NUS3045MN
V
GS
8
20
8
20
V
Continuous Drain Current, Steady State, T
A
= 25
°
C (Note 1)
NUS2045MN
NUS3045MN
I
D
1.0
1.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surfacemounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 30157, (R = 1500 , C = 100 pF, F = 3 pulses delay 1 s).
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| NUS3046MN | Overvoltage Protection IC with Integrated MOSFET |
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| NUS3055MUTAG | Low Profile Overvoltage Protection IC with Integrated MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NUS3046MN | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Overvoltage Protection IC with Integrated MOSFET |
| NUS3046MNT1G | 功能描述:MOSFET 5.5V OVP IC W/ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NUS3055MUTAG | 功能描述:監(jiān)控電路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| NUS3065MU | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Profile Overvoltage Protection IC with Integrated MOSFET |
| NUS3065MUTAG | 功能描述:監(jiān)控電路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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