參數(shù)資料
型號(hào)： NUS3046MNT1G
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 電源管理
英文描述： Overvoltage Protection IC with Integrated MOSFET
中文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝： 3.30 X 3.30 MM, LEAD FREE, DFN-8
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 143K
代理商： NUS3046MNT1G
Semiconductor Components Industries, LLC, 2006
June, 2006
Rev. 1
Publication Order Number:
NUS3046MN/D
NUS3046MN
Overvoltage Protection IC
with Integrated MOSFET
This device represents a new level of safety and integration by
combining the NCP346 overvoltage protection circuit (OVP) with a
30 V P
channel power MOSFET. This IC is specifically designed to
protect sensitive electronic circuitry from overvoltage transients and
power supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
The OVP IC is optimized for applications that use an external
AC
DC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. It has a nominal overvoltage
threshold of 5.5 V which makes it ideal for single cell Li
Ion as well
as 3/4 cell NiCD/NiMH applications.
Features
Overvoltage Turn
Off Time of Less Than 1.0 s
Accurate Voltage Threshold of 5.5 V, Nominal
Control Input Compatible with 1.8 V Logic Levels
30 V Integrated P
Channel Power MOSFET
Low R
DS(on)
= 66 m @
4.5 V
Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable
Applications
Maximum Solder Reflow temperature @ 260
°
C
This is a Pb
Free Device
Benefits
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Applications
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
DFN8
CASE 506AL
Device
Package
Shipping
ORDERING INFORMATION
IN
GND
CNTRL
DRAIN
V
CC
OUT
GATE
SRC
(Bottom View)
PIN ASSIGNMENT
3046
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
= Pb
Free Package
MARKING DIAGRAM
3046
AYWW
1
1
2
3
4
8
7
6
5
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUS3046MNT1G
DFN8
(Pb
Free)
3000 Tape & Reel
1
8
GND
DRAIN
http://onsemi.com
10
9
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NUS3055MUTAG 功能描述:監(jiān)控電路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類(lèi)型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
NUS3065MU 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Profile Overvoltage Protection IC with Integrated MOSFET
NUS3065MUTAG 功能描述:監(jiān)控電路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類(lèi)型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
NUS3116MT 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Main Switch Power MOSFET and Dual Charging BJT
NUS3116MTR2G 功能描述:MOSFET OSPI QUAD BUS BUFFER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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