參數(shù)資料
型號： NUS3046MNT1G
廠商： ON SEMICONDUCTOR
元件分類： 電源管理
英文描述： Overvoltage Protection IC with Integrated MOSFET
中文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝： 3.30 X 3.30 MM, LEAD FREE, DFN-8
文件頁數(shù)： 4/7頁
文件大小： 143K
代理商： NUS3046MNT1G
NUS3046MN
http://onsemi.com
4
OVERVOLTAGE PROTECTION IC ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C, V
CC
= 6.0 V, unless otherwise specified)
Characteristic
Symbol
Pin
Min
Typ
Max
Unit
V
CC
Operating Voltage Range
V
CC(opt)
8
2.5
(+3)
25
V
Supply Current (I
CC
+ I
Input
; V
CC
= 5.0 V Steady State)
I
supply
1, 8
0.75
1.2
mA
Input Threshold (V
Input
connected to V
CC
; V
Input
increasing)
V
Th
1
5.3
5.5
5.7
V
Input Hysteresis (V
Input
connected to V
CC
; V
Input
decreasing)
V
Hyst
1
20
50
200
mV
Input Impedance (Input = V
Th
)
R
in
1
30
60
100
k
CNTRL Voltage High (V
CC
= V
in
= 4.0 V)
V
ih
3
1.5
V
CNTRL Voltage Low (V
CC
= V
in
= 4.0 V)
V
il
3
0.5
V
CNTRL Current High (V
ihCNTRL
= 5.0 V, V
CC
= V
in
= 5.0 V)
I
ih
3
95
200
A
CNTRL Current Low (V
ilCNTRL
= 0.5 V, V
CC
= V
in
= 5.0 V)
I
il
3
10
20
A
Output Sink Current (V
CC
= V
in
= 5.0 V; V
OUT
= 1.0 V)
I
Sink
7
4
10
16
A
Output Voltage High (V
CC
= V
in
= 5.0 V; CNTRL = 0 V, I
Source
= 10 mA)
Output Voltage High (V
CC
= V
in
= 5.0 V; CNTRL = 0 V, I
Source
= 0.25 mA)
Output Voltage High (V
CC
= V
in
= 5.0 V; CNTRL = 0 V, I
Source
= 0 mA)
V
oh
7
V
CC
1.0
V
CC
0.25
V
CC
0.1
V
Output Voltage Low
(V
CC
= V
in
= 5.0 V; I
Sink
= 0 mA; CNTRL = 0 V)
V
ol
7
0.1
V
Turn ON Delay
Input (Note 3)
(V
Input
connected to V
CC
; V
Input
step down signal from 6.0 to 5.0 V;
measured to 50% point of OUT)
T
ON IN
7
1.8
ms
Turn OFF Delay
Input (V
connected to V
; CNTRL = 0 V; V
Input
stepup signal from 5.0 to 6.0 V; C
L
= 12 nF; Output > V
CC
1.0 V)
T
OFF IN
7
0.5
1.0
s
Turn ON Delay
CNTRL (V
CC
= V
in
= 5.0 V; CNTRL step down signal
from 2.0 to 0.5 V; measured to 50% point of OUT) (Note 3)
T
ON CT
7
10
s
Turn OFF Delay
CNTRL (V
= V
in
= 5.0 V;CNTRL step up signal from
0.5 to 2.0 V; C
L
= 12 nF; Output > V
CC
1.0 V)
T
OFF CT
7
0.6
1.0
s
3. Guaranteed by design.
P
CHANNEL MOSFET ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Units
Drain to Source On Resistance
V
GS
=
4.5 V, I
D
=
600 mA
V
GS
=
4.5 V, I
D
=
1.0 A
R
DS(on)
66
66
110
110
m
Zero Gate Voltage Drain Current
V
GS
= 0 V, V
DS
=
24 V
I
DSS
1.0
A
Turn On Delay (Note 4)
V
GS
=
4.5 V, I
D
=
1.0 A, R
G
= 6.0 , V
DS
=
15 V
t
d(on)
11
ns
Turn Off Delay (Note 4)
V
GS
=
4.5 V, I
D
=
1.0 A, R
G
= 6.0 , V
DS
=
15 V
t
d(off)
28
ns
Input Capacitance (Note 3)
V
GS
= 0 V, f = 1.0 MHz, V
DS
=
15 V
C
in
750
pF
Gate to Source Leakage Current
V
GS
=
±
20 V, V
DS
= 0 V
I
GSS
±
10
nA
Drain to Source Breakdown Voltage
V
GS
= 0 V, I
D
=
250 A
V
(BR)DSS
30
V
Gate Threshold Voltage
V
GS
= V
DS
, I
D
=
250 A
V
(GS)th
3.0
1.0
V
4. Switching characteristics are independent of operating junction temperature.
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