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參數(shù)資料
| 型號： | NTP75N06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 75 Amps, 60 Volts, Logic Level N–Channel TO–220(75A, 60 V,邏輯電平，N通道，TO220封裝的功率MOSFET) |
| 中文描述： | 75 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 79K |
| 代理商： | NTP75N06L |
NTP75N06L, NTB75N06L
http://onsemi.com
4
1000
100
10
1
0.1
0
200
400
600
800
1000
4
2
5
1
3
0
6
50
10
10
6000
5
0
C
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
G
,
1
1000
10
100
10
100
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
R
G
, GATE RESISTANCE ( )
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
t
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
I
D
,
E
A
,
A
12000
10
1
100
0
10
70
0.6
0.76
0.8
0.72
0.68
0.84
0.64
0.96
30
60
20
40
0
70
80
25
125
150
100
75
50
175
GATETOSOURCE OR DRAINTOSOURCE (V)
2000
4000
8000
10000
25
I
S
,
15
20
5
20
30
40
50
60
0.86
0.92
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
I
D
= 75 A
T
J
= 25
°
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
C
iss
V
GS
= 15 V
SINGLE PULSE
T
C
= 25
°
C
V
DS
= 30 V
I
D
= 75 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25
°
C
I
D
= 75 A
10 ms
1 ms
100 s
10 s
dc
t
r
t
f
t
d(off)
t
d(on)
V
DS
Q
2
Q
1
Q
T
10
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| NTP85N03 | 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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