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參數(shù)資料
| 型號： | NTP10N60 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 10 Amps, 600 Volts N-Channel(10A,600V,N溝道增強(qiáng)型MOS場效應(yīng)管（TO-220封裝）) |
| 中文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | NTP10N60 |
NTP10N60, NTB10N60
http://onsemi.com
4
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and Drain–to–Source
Voltage versus Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
12
11
10
9
8
7
6
5
4
3
2
1
0
35
30
25
20
15
10
5
0
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE ( )
10
1
100
10
1000
Figure 10. Diode Forward Voltage versus Current
V
SD
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
10
9
8
7
6
5
4
3
2
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
0
10
1
0.1
1
0
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
G
,
45
40
t
100
I
S
,
I
D
,
100
10
1000
V
D
,
600
550
500
450
400
350
300
250
200
150
100
50
0
T
J
= 25
°
C
I
D
= 10 A
V
DD
= 300 V
V
GS
= 10 V
t
d(off)
t
d(on)
t
f
t
r
T
J
= 25
°
C
V
GS
= 0 V
10 s
100 s
1 ms
10 ms
d
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
T
J
= 25
°
C
I
D
= 10 A
V
DS
V
GS
Q2
Q1
Q3
QT
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
25
20
15
10
5
0
–5
–10
5000
4500
4000
1000
500
0
3500
3000
2500
2000
1500
T
J
= 25
°
C
V
GS
= 0 V
C
iss
C
oss
C
rss
V
DS
V
GS
C
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