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參數(shù)資料
| 型號： | NTB18N06LT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) |
| 中文描述： | 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 92K |
| 代理商： | NTB18N06LT4 |
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 3
1
Publication Order Number:
NTP18N06L/D
NTP18N06L, NTB18N06L
Power MOSFET
15 Amps, 60 Volts,
Logic Level
NChannel TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 m )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
10
20
Vdc
Drain Current
Continuous @ T
C
= 25
°
C
Continuous @ T
C
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
15
8.0
45
Adc
Adc
A
pk
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
48.4
0.32
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, V
DS
= 60 Vdc,
I
L(pk)
= 11 A, L = 1.0 mH, R
G
= 25 )
E
AS
61
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
3.1
72.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
15 AMPERES
60 VOLTS
R
DS(on)
= 100 m
TO220AB
CASE 221A
STYLE 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx18N06L = Device Code
x
= B or P
LL
= Location Code
Y
= Year
WW
= Work Week
NTx18N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx18N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D
2
PAK
CASE 418AA
STYLE 2
4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
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| NTB18N06LT4G | Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB18N06LT4G | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB18N06T4 | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB18N06T4G | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB22N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB22N06L | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 22A 3-Pin(2+Tab) D2PAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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