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參數(shù)資料
| 型號： | NTB18N06LT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) |
| 中文描述： | 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NTB18N06LT4 |
NTP18N06L, NTB18N06L
http://onsemi.com
7
INFORMATION FOR USING THE D
2
PAK SURFACE MOUNT PACKAGE
RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
mm
inches
0.33
8.38
0.04
1.016
0.63
17.02
0.42
10.66
0.12
3.05
0.24
6.096
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| NTB18N06LT4G | Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) |
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| NTB23N03RG | Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB18N06LT4G | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB18N06T4 | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB18N06T4G | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB22N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB22N06L | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 22A 3-Pin(2+Tab) D2PAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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