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參數(shù)資料
| 型號： | NTB12N50 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement-Mode TMOS Power FET(12A,500V,N溝道增強(qiáng)型TMOS場效應(yīng)管) |
| 中文描述： | 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 73K |
| 代理商： | NTB12N50 |
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 0
1
Publication Order Number:
NTB12N50/D
Preferred Device
N–Channel Enhancement–Mode
Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy
in the avalanche and commutation modes. This new energy efficient
design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls. These devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
New Features of TMOS 7
Ultra Low On–Resistance Provides Higher Efficiency
Reduced Gate Charge
Features Common to TMOS 7 and TMOS E–FETS
Avalanche Energy Specified
Diode Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
— Continuous
— Non–Repetitive (tp
Drain — Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
Total Power Dissipation
Derate above 25
°
C
VDSS
VDGR
500
500
Vdc
Vdc
Vdc
10 ms)
VGS
VGSM
ID
ID
IDM
PD
20
40
12
10
42
202
1.61
–55 to
150
720
10
μ
s)
Adc
Watts
W/
°
C
°
C
Operating and Storage Temperature
Range
TJ, Tstg
Single Drain–to–Source Avalanche
Energy — Starting TJ = 25
°
C
(VDD = 100 V, VGS = 10 Vdc,
IL = 12 A, L = 10 mH, RG = 25
)
Thermal Resistance
— Junction–to–Case
— Junction–to–Ambient
— Junction–to–Ambient(1)
EAS
mJ
R
θ
JC
R
θ
JA
R
θ
JA
TL
0.62
62.5
50
260
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended
pad size.
°
C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
TMOS POWER FET
12 AMPERES
500 VOLTS
RDS(on) = 0.41
Device
Package
Shipping
ORDERING INFORMATION
NTB12N50
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
PIN ASSIGNMENT
1
2
3
Source
Gate
Drain
4
Drain
http://onsemi.com
N–Channel
D
S
G
NTB12N50T4
D2PAK
800 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB12N50/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TMOS 7 E-FET? Power Field Effect Transistor |
| NTB12N50T4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB13N10 | 功能描述:MOSFET 100V 13A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB13N10G | 功能描述:MOSFET 100V 13A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB13N10T4 | 功能描述:MOSFET 100V 13A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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