- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363712 > NTHS5443 (ON SEMICONDUCTOR) Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | NTHS5443 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | NTHS5443 |
Semiconductor Components Industries, LLC, 2005
July, 2005 Rev. 6
1
Publication Order Number:
NTHS5443T1/D
NTHS5443
Power MOSFET
20 V, 4.9 A, PChannel ChipFET
Features
Low R
DS(on)
for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package Saves Board Space
PbFree Package is Available
Applications
Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
5 secs
Steady
State
Unit
DrainSource Voltage
V
DS
20
V
GateSource Voltage
V
GS
12
V
Continuous Drain Current
(T
J
= 150
°
C) (Note 1)
T
A
= 25
°
C
T
A
= 85
°
C
I
D
4.9
3.5
3.6
2.6
A
Pulsed Drain Current
I
DM
15
A
Continuous Source Current (Note 1)
I
S
4.9
3.6
A
Maximum Power Dissipation (Note 1)
T
A
= 25
°
C
T
A
= 85
°
C
P
D
2.5
1.3
1.3
0.7
W
Operating Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTHS5443T1
ChipFET
3000/Tape & Reel
G
S
D
PChannel MOSFET
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
20 V
56 m @ 4.5
R
DS(on)
TYP
4.9 A
I
D
MAX
V
(BR)DSS
NTHS5443T1G
ChipFET
(PbFree)
3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 1
MARKING
DIAGRAM
1
2
3
4
D
D
D
G
D
S
PIN
CONNECTIONS
8
7
6
5
5
6
7
8
1
2
3
4
A
M
A4 = Specific Device Code
M = Month Code
= PbFree Package
(Note: Microdot may be in either location)
D
D
1
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTHS5443T1 | Power MOSFET |
| NTHS5443T1G | Power MOSFET |
| NTH | Isolated 2W Dual Output SM DC-DC Converters |
| NTJD1155L | Power MOSFET 8V, ±1.3A, High Side Load Switch with Level Shift, P Channel SC88(8V, ±1.3A功率MOSFET) |
| NTJD2152P | Trench Small Signal MOSFET 8 V, Dual P Channel, SC88 ESD Protection(8V雙功率MOSFET帶ESD保護(hù)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHS5443T1 | 功能描述:MOSFET -20V -4.9A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHS5443T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET P-Channel ChipFET? |
| NTHS5443T1G | 功能描述:MOSFET -20V -4.9A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHS5445T1 | 功能描述:MOSFET P-CH 8V 5.2A CHIPFET RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTHS5445T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET P-Channel ChipFET? |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。