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參數(shù)資料
| 型號(hào)： | NTHS2101PT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | −8.0 V, −7.5 A P−Channel ChipFET |
| 中文描述： | 5.4 A, 8 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 1206A-03, CHIPFET-8 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | NTHS2101PT1 |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 4
1
Publication Order Number:
NTHS2101P/D
NTHS2101P
Power MOSFET
8.0 V, 7.5 A PChannel ChipFET
Features
Offers an Ultra Low R
DS(on)
Solution in the ChipFET Package
Miniature ChipFET Package 40% Smaller Footprint than TSOP6
making it an Ideal Device for Applications where Board Space is at a
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low R
DS(on)
at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
PbFree Package is Available
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
Charge Control in Battery Chargers
Buck and Boost Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
8.0
Vdc
GatetoSource Voltage Continuous
V
GS
8.0
Vdc
Drain Current
Continuous
5 seconds
I
D
5.4
7.5
A
Total Power Dissipation
Continuous @ T
A
= 25
°
C
(5 sec) @ T
A
= 25
°
C
Continuous @ 85
°
C
(5 sec) @ 85
°
C
P
D
1.3
2.5
0.7
1.3
W
Continuous Source Current
Is
1.1
A
Thermal Resistance (Note 1)
JunctiontoAmbient, 5 sec
JunctiontoAmbient, Continuous
R
JA
50
95
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
G
S
D
PChannel MOSFET
S
D
G
D
D
D
D
D
1
2
3
4
5
6
7
8
Device
Package
Shipping
ORDERING INFORMATION
NTHS2101PT1
ChipFET
3000/Tape & Reel
PIN
CONNECTIONS
ChipFET
CASE 1206A
STYLE 1
MARKING
DIAGRAM
D
M
D4 = Specific Device Code
M = Month Code
1
2
3
4
8
7
6
5
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
25 m @ 2.5 V
GS
Ultra Low R
DS(on)
TYP
19 m @ 4.5 V
GS
I
D
MAX
V
(BR)DSS
8.0 V
7.5 A
34 m @ 1.8 V
GS
NTHS2101PT1G
ChipFET
(PbFree)
3000/Tape & Reel
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| NTHS2101PT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 8 V P-Channel Single ChipFET? |
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