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參數(shù)資料
| 型號： | NTHS4501N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 6.7A, Single N Channel, ChipFET Package(30V, 6.7A功率MOSFET) |
| 中文描述： | 30V的功率MOSFET，6.7A，單N通道，ChipFET的封裝（30V的，6.7A功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 130K |
| 代理商： | NTHS4501N |
Semiconductor Components Industries, LLC, 2006
February, 2006
Rev. 3
1
Publication Order Number:
NTHS4501N/D
NTHS4501N
Power MOSFET
30 V, 6.7 A, Single N
Channel,
ChipFET Package
Features
Planar Technology Device Offers Low R
DS(on)
and Fast Switching Speed
in a ChipFET Package
Leadless ChipFET Package has 40% Smaller Footprint than TSOP
6.
Ideal Device for Applications Where Board Space is at a Premium.
ChipFET Package Exhibits Excellent Thermal Capabilities Where
Heat Transfer is Required.
Pb
Free Package is Available
Applications
Buck and Boost Converters
Optimized for Battery and Load Management Applications in
Portable Equipment such as Notebook Computers, MP3 Players,
Cell Phones, Digital Cameras, Personal Digital Assistants and Other
Portable Applications
Charge Control in Battery Chargers
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
I
D
30
V
Gate
to
Source Voltage
Continuous Drain
Current (Note 1)
±
20
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
4.9
3.5
t
≤
5 s
Steady
State
6.7
Power Dissipation
(Note 1)
P
D
1.3
W
0.7
t
≤
5 s
2.5
Pulsed Drain Current
t
p
= 10 s
I
DM
T
J
,
T
STG
I
S
T
L
20
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
1.1
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
°
C/W
Junction
to
Ambient – Steady State (Note 1)
R
JA
R
JF
R
JA
95
Junction
to
Foot (Drain) Steady State (Note 1)
20
Junction
to
Ambient – t
≤
5 s (Note 1)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
50
ChipFET
CASE 1206A
STYLE 1
MARKING DIAGRAM
AND PIN ASSIGNMENT
http://onsemi.com
D2 M
D2
M
= Specific Device Code
= Month Code
= Pb
Free Package
1
8
30 V
40 m @ 4.5 V
30 m @ 10 V
R
DS(on)
Typ
6.7 A
I
D
Max
V
(BR)DSS
N
Channel MOSFET
D
S
G
Device
Package
Shipping
ORDERING INFORMATION
NTHS4501NT1
ChipFET
ChipFET
(Pb
Free)
3000/Tape & Reel
NTHS4501NT1G
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D
D D S
D
D D G
1
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