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參數(shù)資料
| 型號(hào)： | NTHS4101P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 20 V, P-Channel Power MOSFET ChipFET Single Package(20V，單P通道，ChipFET封裝的功率MOSFET) |
| 中文描述： | 20五，P溝道功率MOSFET ChipFET的單包（20V的，單P通道，ChipFET的封裝的功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | NTHS4101P |
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 0
1
Publication Order Number:
NTHS4101P/D
NTHS4101P
20 V, PChannel
Power MOSFET ChipFET
Single Package
Features
Offers an Ultra Low R
DS(on)
Solution in the ChipFET Package
Miniature ChipFET Package 40% Smaller Footprint than TSOP6
making it an Ideal Device for Applications where Board Space is at a
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low R
DS(on)
at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
Charge Control in Battery Chargers
Buck and Boost Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
Vdc
GatetoSource Voltage Continuous
V
GS
8.0
Vdc
Drain Current Continuous
5 seconds
I
D
I
D
4.8
6.7
A
Total Power Dissipation
Continuous @ T
A
= 25
°
C
(5 sec) @ T
A
= 25
°
C
Continuous @ 85
°
C
(5 sec) @ 85
°
C
P
D
1.3
2.5
0.7
1.3
W
Continuous Source Current
Is
4.8
A
Thermal Resistance (Note 1)
JunctiontoAmbient, 5 sec
JunctiontoAmbient, Continuous
R
JA
R
JA
50
95
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to a 1
″
x 1
″
FR4 board.
G
S
D
PChannel MOSFET
S
D
G
D
D
D
D
D
1
2
3
4
5
6
7
8
Device
Package
Shipping
ORDERING INFORMATION
NTHS4101PT1
ChipFET
3000 Tape / Reel
PIN
CONNECTIONS
ChipFET
CASE 1206A
Style 1
MARKING
DIAGRAM
C
C6 = Specific Device Code
1
2
3
4
8
7
6
5
http://onsemi.com
20 V
30 m @ 2.5 V
21 m @ 4.5 V
R
DS(on)
TYP
4.8 A
I
D
MAX
V
(BR)DSS
42 m @ 1.8 V
NTHS4101PT1G
ChipFET
(Pbfree)
3000 Tape / Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHS4101P/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 20 V Single P-Channel ChipFET ? |
| NTHS4101P_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, 6.7 A, P-Channel ChipFET |
| NTHS4101PT1 | 功能描述:MOSFET -20V -6.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHS4101PT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Trench Power MOSFET 20 V P Channel Single ChipFET |
| NTHS4101PT1G | 功能描述:MOSFET -20V -6.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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