- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363711 > NTHC5513 (ON SEMICONDUCTOR) Power MOSFET(功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTHC5513 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 79K |
| 代理商： | NTHC5513 |
Semiconductor Components Industries, LLC, 2003
November, 2003 Rev. 3
1
Publication Order Number:
NTHC5513/D
NTHC5513
Power MOSFET
Complementary, 20 V, +3.1 A / 2.1 A,
ChipFET
Features
Complementary N Channel and P Channel MOSFET
Small Size, 40% Smaller than TSOP6 Package
Leadless SMD package Featuring Complementary Pair
ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
Low R
DS(on)
in a ChipFET Package for High Efficiency Performance
Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
Applications
Load Switch Applications Requiring Level Shift
DCtoDC Conversion Circuits
Drive Small Brushless DC Motors
Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
±
12
V
Continuous Drain
Current (Note 1)
NCh
Steady
State
T
A
= 25
°
C
I
D
3.1
A
T
A
= 85
°
C
2.15
PCh
Steady
State
T
A
= 25
°
C
2.1
T
A
= 85
°
C
1.5
Pulsed Drain Current
(Note 1)
NCh
t = 10 s
I
DM
10
A
PCh
t = 10 s
7.0
Power Dissipation Steady State
(Note 1)
T
A
= 25
°
C
P
D
1.1
W
Operating Junction and Storage
Temperature
T
J
,
T
STG
55 to
150
°
C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient SteadyState (Note 1)
R
JA
110
°
C/W
1. Surfacemounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
G
D
S
NChannel MOSFET
1
1
1
G
D
2
2
PChannel MOSFET
S2
Device
Package
Shipping
ORDERING INFORMATION
NTHC5513T1
ChipFET
3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 2
1
2
3
4
5
6
7
8
PIN CONNECTIONS
MARKING
DIAGRAM
C
C1 = Specific Device Code
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
Bottom View
http://onsemi.com
Top View
NChannel
20 V
PChannel
20 V
80 m @ 2.5 V
60 m @ 4.5 V
130 m @ 4.5 V
200 m @ 2.5 V
R
DS(on)
TYP
3.1 A
2.1 A
I
D
MAX
V
(BR)DSS
NTHC5513T1G
ChipFET
(PbFree)
3000/Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTHD3100C | Power MOSFET 20V, +3.9A/4.4A, Complementary ChipFET(20V, +3.9A/4.4A功率MOSFET) |
| NTHD3101F | Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) |
| NTHD3102C | Power MOSFET(功率MOSFET) |
| NTHD4102P | Power MOSFET 20 V, Dual P-Channel(20V，雙P通道的功率MOSFET) |
| NTHD4401PT1 | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHC5513T1 | 功能描述:MOSFET 20V +3.9A/-3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHC5513T1G | 功能描述:MOSFET 20V +3.9A/-3A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHC5513T1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CHANNEL MOSFET 20V 1206A |
| NTHC60A3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Crystal Clock Oscillator |
| NTHC60AA3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Crystal Clock Oscillator |
發(fā)布緊急采購，3分鐘左右您將得到回復。