- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363711 > NTHD4102P (ON SEMICONDUCTOR) Power MOSFET 20 V, Dual P-Channel(20V，雙P通道的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | NTHD4102P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 20 V, Dual P-Channel(20V，雙P通道的功率MOSFET) |
| 中文描述： | 功率MOSFET 20，雙P V型頻道（20V的，雙P通道的功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NTHD4102P |
Semiconductor Components Industries, LLC, 2005
November, 2005 Rev. 5
1
Publication Order Number:
NTHD4102P/D
NTHD4102P
Power MOSFET
20 V, 4.1 A, Dual PChannel ChipFET
Features
Offers an Ultra Low R
DS(ON)
Solution in the ChipFET Package
Miniature ChipFET Package 40% Smaller Footprint than TSOP6
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
PbFree Package is Available
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, and PDAs
Charge Control in Battery Chargers
Buck and Boost Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
8.0
V
Continuous Drain
Current (Note 1)
Steady State
T
A
= 25
°
C
I
D
2.9
A
T
A
= 85
°
C
2.1
t
≤
10 s
T
A
= 25
°
C
4.1
Power Dissipation
(Note 1)
Steady State
T
A
= 25
°
C
P
D
1.1
W
t
≤
10 s
2.1
Pulsed Drain
Current
tp = 10 ms
I
DM
13.8
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
°
C
Source Current (Body Diode)
I
S
1.1
A
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient, Steady State (Note 1)
R
JA
113
°
C/W
JunctiontoAmbient, t
≤
10s (Note 1)
60
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
8
7
6
5
5
6
7
8
1
2
3
4
C
C7 = Specific Device Code
M
= Month Code
= PbFree Package
PChannel MOSFET
Device
Package
Shipping
ORDERING INFORMATION
NTHD4102PT1
ChipFET
S
1
G
1
D
1
PChannel MOSFET
S
2
G
2
D
2
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
20 V
64 m @ 4.5 V
4.1 A
85 m @ 2.5 V
120 m @ 1.8 V
NTHD4102PT1G
ChipFET
(PbFree)
3000/Tape & Reel
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ChipFET
CASE 1206A
STYLE 2
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTHD4401PT1 | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
| NTHD4401PT1G | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
| NTHD4401P | Power MOSFET 20 V, Dual P-Channel, 2.1 A(2.1A，20V，雙P通道的功率MOSFET) |
| NTHD4P02F | Power MOSFET and Schottky Diode |
| NTHD4P02FT1 | Power MOSFET and Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHD4102P_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
| NTHD4102PT1 | 功能描述:MOSFET -20V -4.1A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4102PT1G | 功能描述:MOSFET -20V -4.1A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4102PT3G | 功能描述:MOSFET PFET 20V 4.8A 80M RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4401P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。