參數(shù)資料
型號(hào)： NTHD3100C
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 20V, +3.9A/4.4A, Complementary ChipFET(20V, +3.9A/4.4A功率MOSFET)
中文描述： 功率MOSFET 20V的，3.9A/4.4A，補(bǔ)充ChipFET的（20V的，3.9A/4.4A功率MOSFET的）
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 148K
代理商： NTHD3100C
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 3
1
Publication Order Number:
NTHD3100C/D
NTHD3100C
Power MOSFET
20 V, +3.9 A /
4.4 A,
Complementary ChipFET
Features
Complementary N
Channel and P
Channel MOSFET
Small Size, 40% Smaller than TSOP
6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Trench P
Channel for Low On Resistance
Low Gate Charge N
Channel for Test Switching
Pb
Free Packages are Available
Applications
DC
DC Conversion Circuits
Load Switch Applications Requiring Level Shift
Drive Small Brushless DC Motors
Ideal for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
20
V
Gate
to
Source Voltage
N
Ch
V
GS
12
V
P
Ch
8.0
N
Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
2.9
A
T
A
= 85
°
C
2.1
t
≤
10 s
T
A
= 25
°
C
3.9
P
Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
3.2
A
T
A
= 85
°
C
2.3
t
≤
10 s
T
A
= 25
°
C
4.4
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
1.1
W
t
≤
5 s
3.1
Pulsed Drain Current
(Note 1)
N
Ch
t = 10 s
I
DM
12
A
P
Ch
t = 10 s
13
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
°
C
Source Current (Body Diode)
I
S
2.5
A
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 seconds)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
G
D
S
N
Channel MOSFET
1
1
1
G
D
2
2
P
Channel MOSFET
S2
http://onsemi.com
N
Channel
20 V
P
Channel
20 V
77 m @ 2.5 V
58 m @ 4.5 V
64 m @
4.5 V
85 m @
2.5 V
R
DS(on)
Typ
3.9 A
4.4 A
I
D
MAX
V
(BR)DSS
C9
M
= Specific Device Code
= Month Code
= Pb
Free Package
ChipFET
CASE 1206A
STYLE 2
AND PIN A
1
8
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
1
2
3
4
5
6
7
8
PIN
CONNECTIONS
MARKING
DIAGRAM
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTHD3100CT1 功能描述:MOSFET 20V +3.9A/-4.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTHD3100CT1G 功能描述:MOSFET 20V +3.9A/-4.4A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTHD3100CT3 功能描述:MOSFET 20V +3.9A/-4.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTHD3100CT3G 功能描述:MOSFET 20V +3.9A/-4.4A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTHD3100F 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices
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