- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363711 > NTGS3446 (ON SEMICONDUCTOR) Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6(5.1A,20V邏輯電平,N通道,TSOP-6封裝的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | NTGS3446 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6(5.1A,20V邏輯電平,N通道,TSOP-6封裝的功率MOSFET) |
| 中文描述： | 功率MOSFET五點(diǎn)一安培，20伏特N通道的TSOP - 6（5.1A，20V的邏輯電平，?通道，采用TSOP - 6封裝的功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | NTGS3446 |
Semiconductor Components Industries, LLC, 2006
January, 2006
Rev. 5
1
Publication Order Number:
NTGS3446/D
NTGS3446
Power MOSFET
20 V, 5.1 A Single
NChannel, TSOP6
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
Specified at Elevated Temperature
Pb
Free Package is Available
Applications
Power Management in portable and battery
powered products, i.e.
computers, printers, PCMCIA cards, cellular and cordless
Lithium Ion Battery Applications
Notebook PC
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
20
V
Gate
to
Source Voltage
V
GS
±
12
V
Thermal Resistance
Junction
to
Ambient (Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current
Continuous @ T
A
= 25
°
C
Pulsed Drain Current (t
p
10 s)
R
JA
P
d
I
D
I
DM
244
0.5
2.5
10
°
C/W
W
A
A
Thermal Resistance
Junction
to
Ambient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current
Continuous @ T
= 25
°
C
Pulsed Drain Current (t
p
10 s)
R
JA
P
d
I
D
I
DM
128
1.0
3.6
14
°
C/W
W
A
A
Thermal Resistance
Junction
to
Ambient (Note 3)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current
Continuous @ T
A
= 25
°
C
Pulsed Drain Current (t
p
10 s)
R
JA
P
d
I
D
I
DM
62.5
2.0
5.1
20
°
C/W
W
A
A
Source Current (Body Diode)
I
S
5.1
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR
4 or G
10PCB, operating to steady state.
2. Mounted onto a 2” square FR
4 board (1” sq. 2 oz. cu. 0.06” thick
single
sided), operating to steady state.
3. Mounted onto a 2” square FR
4 board (1” sq. 2 oz. cu. 0.06” thick
single
sided), t < 5.0 seconds.
1 2 5 6
3
N
Channel
Drain
TSOP
6
CASE 318G
STYLE 1
MARKING
DIAGRAM
446
W
= Device Code
= Work Week
PIN ASSIGNMENT
3
Gate
1
Drain
Source
4
2
Drain
Drain
5
Drain
6
4
Gate
Source
Device
Package
Shipping
ORDERING INFORMATION
NTGS3446T1
TSOP
6
TSOP
6
(Pb
Free)
3000/Tape & Reel
NTGS3446T1G
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
20 V
36 m @ 4.5 V
R
DS(on)
TYP
5.1 A
I
D
MAX
V
(BR)DSS
446
W
1
1
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTGS3455T1 | MOSFET -3.5 Amps, -30 Volts P-Channel TSOP-6(-3.5A，-30V，P通道，TSOP-6封裝的MOSFET) |
| NTHC5513 | Power MOSFET(功率MOSFET) |
| NTHD3100C | Power MOSFET 20V, +3.9A/4.4A, Complementary ChipFET(20V, +3.9A/4.4A功率MOSFET) |
| NTHD3101F | Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) |
| NTHD3102C | Power MOSFET(功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTGS3446/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 5 Amps， 20 Volts |
| NTGS3446T1 | 功能描述:MOSFET 20V 5.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS3446T1G | 功能描述:MOSFET 20V 5.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS3447P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 |
| NTGS3447PT1G | 功能描述:MOSFET P-CH 12V 3.4A 6-TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。