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參數(shù)資料
| 型號(hào)： | NTGS3433T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | MOSFET -3.3 Amps, -12 Volts P Channel TSOP6(-3.3A，-12V，P通道，TSOP-6封裝的MOSFET) |
| 中文描述： | 2350 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 318G-02, TSOP-6 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 132K |
| 代理商： | NTGS3433T1 |
Semiconductor Components Industries, LLC, 2006
February, 2006
Rev. 2
1
Publication Order Number:
NTGS3433T1/D
NTGS3433T1
MOSFET
3.3 Amps, 12 Volts
P
Channel TSOP
6
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP
6 Surface Mount Package
Pb
Free Package is Available
Applications
Power Management in Portable and Battery
Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
Gate
to
Source Voltage
Continuous
Thermal Resistance
Junction
to
Ambient (Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current
Continuous @ T
= 25
°
C
Pulsed Drain Current (T
p
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Thermal Resistance
Junction
to
Ambient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current
Continuous @ T
A
= 25
°
C
Pulsed Drain Current (T
p
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Operating and Storage Temperature Range
V
DSS
V
GS
12
8.0
Volts
Volts
10 S)
R
JA
P
d
I
D
I
DM
P
d
I
D
62.5
2.0
3.3
20
1.0
2.35
°
C/W
Watts
Amps
Amps
Watts
Amps
10 S)
R
JA
P
d
I
D
I
DM
P
d
I
D
128
1.0
2.35
14
0.5
1.65
°
C/W
Watts
Amps
Amps
Watts
Amps
T
J
, T
stg
55 to
150
260
°
C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted onto a 2
″
square FR
4 board (1 in sq, 2 oz. Cu 0.06
″
thick single
sided), t
5.0 seconds.
2. Mounted onto a 2
″
square FR
4 board (1 in sq, 2 oz. Cu 0.06
″
thick single
sided), operating to steady state.
T
L
°
C
3
4
1 2 5 6
P
Channel
TSOP
6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
GATE
DRAIN
SOURCE
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
Package
Shipping
ORDERING INFORMATION
NTGS3433T1
TSOP
6
3000 Tape & Reel
TSOP
6
(Pb
Free)
3000 Tape & Reel
V
(BR)DSS
12 V
R
DS(on)
TYP
I
D
Max
3.3 A
75 m @
4.5 V
1
433 M
433
M
= Specific Device Code
= Date Code*
= Pb
Free Package
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NTGS3433T1G
http://onsemi.com
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| NTGS3441P | Power MOSFET() |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTGS3433T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET -3.3 Amps， -12 Volts |
| NTGS3433T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:MOSFET -3.3 Amps, -12 Volts |
| NTGS3433T1G | 功能描述:MOSFET -12V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS3441B | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 |
| NTGS3441BT1G | 功能描述:MOSFET -20V -3.5A SGL P-CHN TSOP-6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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