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參數(shù)資料
| 型號： | NTGS3441P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET() |
| 中文描述： | 功率MOSFET（） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NTGS3441P |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 0
1
Publication Order Number:
NTGS3441P/D
NTGS3441P
Power MOSFET
20 V, 3.16 A, Single PChannel TSOP6
Features
Ultra Low R
DS(on)
to Improve Conduction Loss
Low Gate Charge to Improve Switching Losses
TSOP6 Surface Mount Package
This is a PbFree Device
Applications
High Side Switch in DCDC Converters
Battery Management
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
±
12
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
2.5
A
T
A
= 85
°
C
1.8
t = 10 s
T
A
= 25
°
C
3.16
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
0.98
W
t = 10 s
1.60
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
I
D
1.8
A
T
A
= 85
°
C
1.3
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.51
W
Pulsed Drain Current
t
p
= 10 s
I
DM
13
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
°
C
Source Current (Body Diode)
I
S
1.5
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0751 in sq)
3
4
1 2 5 6
Device
Package
Shipping
ORDERING INFORMATION
PChannel
TSOP6
CASE 318G
STYLE 1
MARKING
DIAGRAM
S3 M
PT
M
= Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain
Drain
3
Gate
2
1
4
Drain
Source
5
6
Drain
NTGS3441PT1G
TSOP6
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
1
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
20 V
91 m @ 4.5 V
3.16 A
144 m @ 2.7 V
http://onsemi.com
188 m @ 2.5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTGS3441T1 | Power MOSFET 1 Amp, 20 Volts |
| NTGS3441T1G | Power MOSFET 1 Amp, 20 Volts |
| NTGS3443T1 | Power MOSFET 2 Amp, 20 Volts P-Channel TSOP-6(2A，20V，P通道，TSOP-6封裝的功率MOSFET) |
| NTGS3446 | Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6(5.1A,20V邏輯電平,N通道,TSOP-6封裝的功率MOSFET) |
| NTGS3455T1 | MOSFET -3.5 Amps, -30 Volts P-Channel TSOP-6(-3.5A，-30V，P通道，TSOP-6封裝的MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTGS3441P_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.16 A, Single P-Channel TSOP-6 |
| NTGS3441PT1G | 功能描述:MOSFET PFET 20V 3.1A .1MOH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS3441T1 | 功能描述:MOSFET 20V 1A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTGS3441T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 1 Amp， 20 Volts |
| NTGS3441T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 1 Amp, 20 VoltsP−Channel TSOP−6 |
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