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參數(shù)資料
| 型號： | NTF3055-160T3LF |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| 中文描述： | 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 55K |
| 代理商： | NTF3055-160T3LF |
NTF3055–160
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Note 3.)
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
72
72
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150
°
C)
IDSS
–
–
–
–
1.0
10
μ
Adc
Gate–Body Leakage Current
(VGS =
±
20 Vdc, VDS = 0 Vdc)
IGSS
–
–
±
100
nAdc
ON CHARACTERISTICS
(Note 3.)
Gate Threshold Voltage
(Note 3.)
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
–
3.1
6.6
4.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(Note 3.)
(VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
–
142
160
m
Static Drain–to–Source On–Resistance
(Note 3.)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150
°
C)
VDS(on)
–
0.142
0.270
0.384
–
Vdc
Forward Transconductance
(Note 3.)
(VDS = 8.0 Vdc, ID = 1.5 Adc)
gfs
–
1.8
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
–
200
280
pF
Output Capacitance
–
68
100
Transfer Capacitance
–
26
40
SWITCHING CHARACTERISTICS
(Note 4.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
QT
Q1
–
9.2
20
ns
Rise Time
(VDD = 30 Vdc, ID = 2.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
RG 9.1
) (Note 3.)
–
9.2
20
Turn–Off Delay Time
–
16
40
Fall Time
–
9.2
20
Gate Charge
(VDS = 48 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc) (Note 3.)
2 0 Ad
–
6.9
14
nC
–
1.4
–
Q2
–
3.0
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 150
°
C) (Note 3.)
VSD
–
–
0.86
0.70
1.0
–
Vdc
Reverse Recovery Time
trr
ta
tb
–
28.9
–
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
(IS 2.0 Adc, VGS 0 Vdc,
dIS/dt = 100 A/
μ
s) (Note 3.)
–
19.1
–
–
9.8
–
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
QRR
–
0.030
–
μ
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTF3055L108 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
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| NTF3055L108T1 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L108T1G | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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