參數(shù)資料
型號(hào): NTF3055-160
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223(2A,60V邏輯電平,N通道,SOT-223封裝的功率MOSFET)
中文描述: 功率MOSFET 2.0安培,60伏特N通道的SOT - 223(第2A,60V的邏輯電平,?通道,采用SOT - 223封裝的功率MOSFET的)
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 55K
代理商: NTF3055-160
NTF3055–160
http://onsemi.com
8
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NTF3055–160/D
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相關(guān)PDF資料
PDF描述
NTF3055-160T1 Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T3 Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T3LF Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道,SOT-223封裝的功率MOSFET)
NTF3055L175 Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223(2A,60V邏輯電平,N通道,SOT-223封裝的功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTF3055-160T1 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTF3055-160T3 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTF3055-160T3LF 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTF3055L108 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108/D 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Power MOSFET 3.0 Amps, 60 Volts, Logic Level