參數(shù)資料
型號(hào): NTF2955T3
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET
中文描述: 1.7 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
封裝: TO-261, CASE 318E-04, 4 PIN
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 56K
代理商: NTF2955T3
NTF2955
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
0
10
2
4
6
8
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
D
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 55
°
C
0
0.4
0.3
0.2
0
10
6
I
D,
DRAIN CURRENT (AMPS)
R
D
)
I
D,
DRAIN CURRENT (AMPS)
R
D
)
V
GS
= 15 V
1.8
1.6
1.4
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
50
50
25
0
25
75
125
100
I
D
= 1.5 A
V
GS
= 10 V
0.8
0
150
10
1000
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
D
,
5
40
60
30
20
10
50
100
8
2
0
2
10
2
1
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
D
0
10
V
GS
= 10 V
V
GS
= 3.8 V
V
GS
= 4.5 V
V
GS
= 5 V
6
2
10
8
4
6
0.1
1.2
4
0
0.25
0.2
0.175
0.15
0.125
0.05
10
8
6
0.1
0.075
2
1
V
GS
= 10 V to 7 V
T
J
= 150
°
C
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 55
°
C
V
DS
10 V
V
GS
= 0 V
8
3
4
4
T
J
= 125
°
C
0.225
2
V
GS
= 6 V
T
J
= 25
°
C
V
GS
= 10 V
0.2
0.4
0.6
45
35
25
15
55
4
5
6
7
8
9
V
GS
= 5.5 V
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