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參數(shù)資料
| 型號： | NTF2955T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 1.7 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, TO-261, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 56K |
| 代理商： | NTF2955T1 |
NTF2955
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
=25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
66.4
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 60 V
V
T
J
= 25
°
C
1.0
A
T
J
= 125
°
C
50
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20
V
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1.0 mA
2.0
4.0
V
DraintoSource On Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 0.75
A
145
170
m
V
GS
= 10
V, I
D
= 1.5
A
150
180
V
GS
= 10
V, I
D
= 2.4
A
154
185
Forward Transconductance
g
FS
V
GS
= 15
V, I
D
= 0.75
A
1.77
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
V
492
pF
Output Capacitance
C
OSS
165
Reverse Transfer Capacitance
C
RSS
50
Total Gate Charge
Q
G(TOT)
V
GS
= 10 V, V
= 30
V,
I
D
= 1 5 A
A
14.3
nC
Threshold Gate Charge
Q
G(TH)
1.2
GatetoSource Charge
Q
GS
2.3
GatetoDrain Charge
Q
GD
5.2
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(ON)
V
GS
= 10
V, V
DD
= 25
V,
I
D
= 1 5 A R
A, R
G
= 9 1
= 25
R
L
11
ns
Rise Time
t
r
7.6
TurnOff Delay Time
t
d(OFF)
65
Fall Time
t
f
38
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 1 5 A
A
T
J
= 25
°
C
1.10
1.30
V
T
J
= 125
°
C
0.9
Reverse Recovery Time
t
RR
36
Charge Time
t
a
V
GS
= 0 V, dI
/dt = 100 A/ s,
I
S
= 1.5
A
20
ns
Discharge Time
t
b
16
Reverse Recovery Charge
Q
RR
0.139
nC
3. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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相關代理商/技術參數(shù) |
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