參數(shù)資料
型號: NTF2955
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET
中文描述: 功率MOSFET
文件頁數(shù): 4/6頁
文件大小: 56K
代理商: NTF2955
NTF2955
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
10
10
15
5
0
20
5
25
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
100
1
0.01
1000
10
1
12
4
2
0
100
50
0
5
0
1000
C
200
800
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
600
400
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
V
G
,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE (
)
Figure 10. Diode Forward Voltage versus Current
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
S
,
t
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
D
,
E
A
,
A
0
10
8
4
16
1
10
100
0
0.5
0.25
0.1
10
100
1
25
125
150
100
75
175
50
I
D
= 1.5 A
T
J
= 25
°
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
1
0.75
1
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
V
DD
= 25 V
I
D
= 1.5 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 25
°
C
I
PK
= 6.7 A
1 ms
100
μ
s
10 ms
dc
t
r
t
d(off)
t
d(on)
V
DS
1.75
150
200
250
Q
GD
Q
T
0
6
2
t
f
1200
6
10
8
10
2
1.25
1.5
100
3
4
10
μ
s
14
12
60
20
10
0
30
40
50
V
D
,
Q
GS
V
DS
0.1
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