參數(shù)資料
型號: NTE6664
廠商: NTE Electronics, Inc.
英文描述: Integrated Circuit 64K-Bit Dynamic RAM
中文描述: 集成電路64K的位動態(tài)隨機(jī)存儲器
文件頁數(shù): 2/5頁
文件大?。?/td> 39K
代理商: NTE6664
Recommended Operating Conditions:
(Note 2, T
A
= 0 to +70
°
C unless otherwise specified)
Parameter
Supply Voltage (Operating Voltage Range)
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
1.0
Typ
5.0
0
Max
5.5
0
6.5
0.8
Unit
V
V
V
V
Logic 1 Voltage, All Inputs
Logic 0 Voltage, All Inputs (Note 3)
Note 2. All voltages referenced to V
SS
.
Note 3. The device will withstand undershoots to the
2V level with a maximum pulse width 0f 20ns
at the
1.5V level. This is periodically sampled rather than 100% tested.
DC Characteristics:
(V
CC
= 5V
±
10%, T
A
= 0 to +70
°
C unless otherwise specified)
Parameter
Symbol
V
CC
Power Supply Current
I
CC1
V
CC
Power Supply Current (Standby)
I
CC2
V
CC
Power Supply Current During
RAS only Refresh Cycles
Input Leakage Current
Any Input Except REFRESH
REFRESH Input Current
I
lkg(F)
Output Leakage Current
I
lkg(O)
Output Logic 1 Voltage
V
OH
Output Logic 0 Voltage
V
OL
Test Conditions
Min
Typ
Max
55
4
45
Unit
mA
mA
mA
t
RC
= 270ns, Note 4
RAS = CAS = V
IH
t
RC
= 270ns, Note 4
I
CC3
I
lkg(L)
V
SS
< V
in
< V
CC
10
μ
A
V
SS
< V
in
< V
CC
CAS at Logic 1, 0
V
out
5.5V
I
out
=
4mA
I
out
= 4mA
20
10
0.4
μ
A
μ
A
V
V
2.4
Note 4. Current is a function of cycle rate and output loading; maximum current is measured at the
fastest cycle rate with the output open.
Capacitance:
(V
CC
= 5V
±
10%, f = 1MHz, T
A
= +25
°
C, Note 5, Periodically Sampled Rather
Than 100% Tested)
Parameter
Symbol
C
in
Test Conditions
Min
Typ
3
6
5
Max
5
8
7
Unit
pF
Input Capacitance
RAS, CAS, WRITE, REFRESH
Output Capacitance
A0
A7, D
Q
C
out
CAS = V
IH
to Disable Output
pF
Note 5. Capacitance measured with a Boonton Meter or effective capacitance calculated from the
equation: C = I
t/
V.
Read, Write, and Read
Modify
Write Cycles:
(V
CC
= 5V
±
10%, T
A
= 0 to +70
°
C unless other
wise specified, Notes 6, 7, and 8)
Parameter
Symbol
t
RC
t
RWC
t
RAC
t
CAC
t
OFF
t
RP
t
RAS
t
CAS
Test Conditions
Note 9, Note 10
Note 9, Note 10
Note 11, Note 13
Note 12, Note 13
Note 19
Min
270
280
0
100
150
75
Typ
Max
150
75
30
10000
10000
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Random Read or Write Cycle Time
Read
Write Cycle Time
Access Time from RAS
Access Time from CAS
Output Buffer and Turn
Off Delay
RAS Precharge Time
RAS Pulse Width
CAS Pulse Width
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