參數(shù)資料
型號: NTE6810
廠商: NTE Electronics, Inc.
英文描述: Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM)
中文描述: 集成電路128 × 8位靜態(tài)隨機存取存儲器(SRAM)
文件頁數(shù): 1/4頁
文件大?。?/td> 42K
代理商: NTE6810
NTE6810
Integrated Circuit
128 x 8–Bit Static Random Access Memory (SRAM)
Description:
The NTE6810 is a byte–orgainzed memory in a 24–Lead DIP type package designed for use in bus–
organized systems. It is fabricated with N–channel silicon–gate technology. For ease of use, this
device operates from a single power supply, has compatibility with TTL and DTL, and needs no clocks
or refreshing because of static operation.
The memory is compatible with the 6800 Microcomputer Family, providing random storage in byte
increments. Memory expansion is provided through multiple Chip Select inputs.
Features:
Organized as 128 Bytes of 8–Bits
Static Operation
Bidirectional Three–State Data Input/Output
Six Chip Select Inputs (Four Active Low, Two Active High)
Single 5V Power Supply
TTL Compatible
Maximum Access Time: 450ns
Absolute Maximum Ratings:
Supply Voltage, V
CC
Input Voltage, V
in
Operating Temperature Range, T
A
Storage Temperature Range, T
stg
Thermal Resistance, Junction to Ambient, R
Θ
JA
Note 1. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high impedance circuit. Reliability
of operation is enhanced if unused inputs are tied to an appropriate logic voltage (e.g., either
V
SS
or V
CC
).
–0.3 to +7V
–0.3 to +7V
0
°
to +70
°
C
–65
°
to +150
°
C
+120
°
C/W
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