參數(shù)資料
型號(hào)： NTE6810
廠商： NTE Electronics, Inc.
英文描述： Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM)
中文描述： 集成電路128 × 8位靜態(tài)隨機(jī)存取存儲(chǔ)器（SRAM）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 42K
代理商： NTE6810
DC Electrical Characteristics:
(V
CC
= 5V
±
5%, V
SS
= 0, T
A
= 0
°
to +70
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Input High Voltage
V
IH
Input Low Voltage
V
IL
Input Current
(A
n
, R/W, CS
n
)
Output High Voltage
V
OH
I
OH
=
–
205
μ
A
Output Low Voltage
V
OL
I
OL
= 1.6mA
Output Leakage Current
(Three
–
State)
V
out
= 0.4V to 2.4V
Supply Current
I
CC
V
CC
= 5.25V, All other pins grounded
Input Capacitance
(A
n
, R/W, CS
n
, CS
n
)
Output Capacitance (D
n
)
C
out
V
out
= 0, T
A
= +25
°
C, f = 1MHz, CSO = 0
Min
Max
V
CC
Unit
V
V
μ
A
V
SS
+2.0
V
SS
–
0.3 V
SS
+0.8
–
I
in
V
in
= 0 to 5.25V
2.5
2.4
–
–
–
V
V
μ
A
0.4
10
I
TSI
CS = 0.8V or CS = 2V,
–
–
80
7.5
mA
pF
C
in
V
in
= 0, T
A
= +25
°
C, f = 1MHz
–
12.5
pF
AC Operating Conditions and Characteristics:
Parameter
Symbol
Min
Max
Unit
Read Cycle
(V
CC
= 5V
±
5%, V
SS
= 0, T
A
= 0
°
to +70
°
unless otherwise specified)
Read Cycle Time
Access Time
Address Setup Time
Address Hold Time
Data Delay Time (Read)
Read to Select Delay Time
Data Hold from Address
Output Hold Time
Data Hold from Read
Read Hold from Chip Select
Write Cycle
(V
CC
= 5V
±
5%, V
SS
= 0, T
A
= 0
°
to +70
°
unless otherwise specified)
Write Cycle Time
Address Setup Time
Address Hold Time
Chip Select Pulse Width
Write to Chip Select Delay Time
Data Setup Time (Write)
Input Hold Time
Write Hold Time from Chip Select
t
cyc(R)
t
acc
t
AS
t
AH
t
DDR
t
RCS
t
DHA
t
H
t
DHR
t
RH
450
–
20
0
–
0
10
10
10
0
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
450
–
–
230
–
–
–
80
–
t
cyc(W)
t
AS
t
AH
t
CS
t
WCS
t
DSW
t
H
t
WH
450
20
0
300
0
190
10
0
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
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