參數(shù)資料
型號(hào): NTE5446
廠商: NTE Electronics, Inc.
英文描述: Silicon Controlled Rectifier (SCR) 8 Amp
中文描述: 可控硅(晶閘管)8放大器
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 22K
代理商: NTE5446
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
mA
Peak Forward or Reverse
Blocking Current
I
DRM
,
I
RRM
Rated V
DRM
or V
RRM
,
Gate Open
T
J
= +25
°
C
T
J
= +100
°
C
T
C
= +25
°
C
T
C
=
40
°
C
T
C
= +25
°
C
T
C
=
40
°
C
10
2
Gate Trigger Current
(Continuous DC)
I
GT
V
D
= 7V, R
L
= 100
7
30
mA
60
mA
Gate Trigger Voltage
(Continuous DC)
V
GT
V
D
= 7V, R
L
= 100
0.75
1.5
V
2.5
V
V
D
= Rated V
DRM
, R
L
= 100
, T
J
= +100
°
C
Pulse Width = 1ms to 2 ms,
Duty Cycle
2%
0.2
V
Peak On
State Voltage
V
TM
I
TM
= 5A
peak
I
TM
= 15.7A
peak
T
C
= +25
°
C
T
C
=
40
°
C
1.0
1.5
V
2.0
V
Holding Current
I
Hold
V
D
= 7V, Gate Open
6
40
mA
70
mA
μ
s
μ
s
μ
s
V/
μ
s
Gate Controlled Turn
On Time
t
gt
t
q
I
TM
= 5A, I
GT
= 20mA, V
D
= Rated V
DRM
I
TM
= 5A, I
R
= 5A
1
Circuit Commutated Turn
Off
Time
15
T
J
= +100
°
C
20
Critical Rate
of
Rise of
Off
State Voltage
dv/dt
V
D
= Rated V
DRM
, Exponential Waveform,
T
J
= +100
°
C, Gate Open
50
.530 (13.4) Max
.668
(17.0)
Max
.655
(16.6)
Max
.166 (4.23)
.150 (3.82) Max
Heat Sink Contact
Area (Bottom)
.143 (3.65) Dia Thru
A (Heat Sink Area)
K
G
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參數(shù)描述
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