參數(shù)資料
型號: NTE5446
廠商: NTE Electronics, Inc.
英文描述: Silicon Controlled Rectifier (SCR) 8 Amp
中文描述: 可控硅(晶閘管)8放大器
文件頁數(shù): 1/2頁
文件大小: 22K
代理商: NTE5446
NTE5442 thru NTE5448
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de-
signed for high–volume consumer phase–control applications such as motor speed, temperature,
and light controls, and for fast switching applications in ignition and starting systems, voltage regula-
tors, vending machines, and lamp drivers.
Features:
Small, Rugged Construction
Practical Level Triggering and Holding Characteristics @ +25
°
C:
I
GT
= 7mA Typ
I
Hold
= 6mA Typ
Low “ON” Voltage: V
TM
= 1V Typ @ 5A @ +25
°
C
High Surge Current Rating: I
TSM
= 80A
Absolute Maximum Ratings:
(Note 1, T
J
= +100
°
C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), V
DRM
or V
RRM
NTE5442
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5444
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5446
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5448
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), V
RSM
NTE5442
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5444
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5446
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5448
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (All Conduction Angles), I
T(RMS)
Average On–State Current (T
C
= +73
°
C), I
T(AV)
Peak Non–Repetitive Surge Current, I
TSM
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage)
Circuit Fusing (T
J
= –40
°
to +100
°
C, t = 1ms to 8.3ms), I
2
t
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, V
RGM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, R
thJC
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
Note 1.
NTE5444
and
NTE5446
are
discontinued
devices and are replaced by
NTE5448
.
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied
concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in
a manner that the voltage applied exceeds the rated blocking voltage.
50V
200V
400V
600V
75V
300V
500V
700V
8A
5.1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80A
. . . . . . . . . . . . .
25A
2
sec
. . . . . . . . . . . . . . . . . . . . . . . . . . .
5W
500mW
2A
10V
–40
°
to +100
°
C
–40
°
to +150
°
C
2.5
°
C/W
40
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
相關(guān)PDF資料
PDF描述
NTE5452 CAP TANT 3.3UF 4.0V 20% SMD
NTE5453 CAP TANT 1.5UF 6.3V 20% SMD
NTE5454 Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate
NTE5455 Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate
NTE5458 Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE5448 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER - 600V 8A TO-127 制造商:NTE Electronics 功能描述:SCR-600 VRM 8.0A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 8A, 600V, TO-127; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:30mA; Current It av:5.1A; On State RMS Current IT(rms):8A; Peak Non Rep Surge Current Itsm 50Hz:80A; Thyristor Case:TO-127 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 600V 80A 3-Pin TO-127
NTE5452 制造商:NTE Electronics 功能描述:SCR THYRISTOR 4A 30V TO-202 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 4A, 30V, TO-202 制造商:NTE Electronics 功能描述:SCR-30 VRM4.0 A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 4A, 30V, TO-202; Peak Repetitive Off-State Voltage, Vdrm:30V; Gate Trigger Current Max, Igt:200A; On State RMS Current IT(rms):4A; Peak Non Rep Surge Current Itsm 50Hz:20A; Holding Current Max Ih:3mA; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 30V 20A 3-Pin(3+Tab) TO-202
NTE5452B 制造商:NTE Electronics 功能描述:
NTE5453 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER- 50VRM 4A TO-202 SENSITIVE GATE 制造商:NTE Electronics 功能描述:SCR, 4A, 50V, TO-202; Peak Repetitive Off-State Voltage, Vdrm:50V; Gate Trigger Current Max, Igt:200A; On State RMS Current IT(rms):4A; Peak Non Rep Surge Current Itsm 50Hz:20A; Holding Current Max Ih:3mA; Thyristor Case:TO-202 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 50V 20A 3-Pin(3+Tab) TO-202
NTE5454 制造商:NTE Electronics 功能描述:SCR THYRISTOR 4A 100V TO-202 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 4A, 100V, TO-202 制造商:NTE Electronics 功能描述:SCR-100 VRM4.0 A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 4A, 100V, TO-202; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:200A; On State RMS Current IT(rms):4A; Peak Non Rep Surge Current Itsm 50Hz:20A; Holding Current Max Ih:3mA; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 100V 20A 3-Pin(3+Tab) TO-202