參數(shù)資料
型號(hào): NTE394
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor Power Amp, High Voltage Switch
中文描述: 硅NPN晶體管功放,高壓開關(guān)
文件頁數(shù): 1/2頁
文件大?。?/td> 19K
代理商: NTE394
NTE394
Silicon NPN Transistor
Power Amp, High Voltage Switch
Description:
The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use
in high voltage, fast switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
BE
= 0), V
CES
Collector–Emitter Voltage (I
B
= 0), V
CEO
Emitter–Base Voltage (I
C
= 0), V
EB
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500V
400V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A
5A
600mA
100W
+150
°
C
–65
°
to +150
°
C
1.25
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Cutoff Current
I
CEO
I
CES
I
EBO
V
CE
= 300V, I
B
= 0
V
CE
= 500V, V
EB
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0, Note 1
I
C
= 3A, I
B
= 0.6A, Note 1
I
C
= 3A, V
CE
= 10V, Note 1
I
C
= 0.3A, V
CE
= 10V
I
C
= 3A, V
CE
= 10V
1
mA
1
mA
Emitter–Base Cutoff Current
1
mA
Collector–Emitter Sustaining Voltage
V
CEO(sus)
V
CE(sat)
V
BE(on)
h
FE
400
V
Collector–Emitter Saturation Voltage
1.5
V
Base–Emitter ON Voltage
1.5
V
DC Current Gain
30
150
10
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 1.5%.
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