參數(shù)資料
型號： NTE395
廠商： NTE Electronics, Inc.
英文描述： Silicon PNP Transistor Wide Band Linear Amplifier
中文描述： 硅PNP晶體管寬帶線性放大器
文件頁數(shù)： 1/2頁
文件大?。?/td> 19K
代理商： NTE395
NTE395
Silicon PNP Transistor
Wide Band Linear Amplifier
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Power Dissipation (T
A
= +25
°
C), P
tot
Power Dissipation (T
C
= +25
°
C), P
tot
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
30V
25V
3V
50mA
225mW
360mW
+200
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +200
°
C
485
°
C/W
775
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 10mA, Note 1
V
CE
= 10V, I
C
= 10mA
I
C
= 20mA, Note 2
V
CE
= 15V, I
C
= 10mA
V
CE
= 15V, I
C
= 10mA
V
CB
= 15V, I
E
= 0, f = 1MHz
–
–
50
nA
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
21E
V
BE
V
CEK
f
T
f
30
–
–
V
Collector–Emitter Breakdown Voltage
25
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
Static Forward Current Transfer Ratio
20
–
–
Base–Emitter Voltage
–
0.75
–
V
Knee Voltage
–
0.8
–
V
Transition Frequency
1.4
2.3
–
GHz
Maximum Oscillation Frequency
–
6.5
–
GHz
Output Capacitance
C
22b
–
1.1
–
pF
Note 1. Pulsed.
Note 2. V
CEK
tested with I
C
= 100ma and I
B
= values for which I
C
= 110mA at V
CE
= 1V.
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