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參數(shù)資料
| 型號(hào)： | NTE312 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | N-Channel Silicon Junction Field Effect Transistor |
| 中文描述： | N溝道硅結(jié)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | NTE312 |
NTE312
N–Channel Silicon Junction
Field Effect Transistor
Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO–92 package.
Features:
High Power Gain: 10dB Min at 400MHz
High Transconductance: 4000
μ
mho Min at 400MHz
Low C
rss
: 1pF Max
High (Y
fs
) / C
iss
Ratio (High–Frequency Figure–of–Merit)
Drain and Gate Leads Separated for High Maximum Stable Gain
Cross–Modulation Minimized by Square–Law Transfer Characteristic
For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Drain–Gate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C ), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), T
L
30V
–30V
50mA
360mW
2.88mW/
°
C
500mW
4.0mW/
°
C
–65
°
to +150
°
C
+260
°
C
. . . . . . . . . . . . . . .
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTE312 | 制造商:NTE Electronics 功能描述:N CHANNEL JFET, -30V, TO-92 |
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| NTE3123 | 制造商:NTE Electronics 功能描述:Phototransistor IR Chip Silicon NPN Darlington 860nm 2-Pin |
| NTE313 | 制造商:NTE Electronics 功能描述:T-NPN- SI-VHF TUNER AMP 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 30V 0.02A 3-Pin |
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