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參數(shù)資料
| 型號(hào)： | NTE314 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Controlled Rectifier (SCR) Power Regulator Switch |
| 中文描述： | 可控硅（晶閘管）電力穩(wěn)壓器開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | NTE314 |
NTE314
Silicon Controlled Rectifier (SCR)
Power Regulator Switch
Description:
The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere
RMS, 400 Volt power supply and computer control applications to +100
°
C maximum junction.
Features:
Low Forward “ON” Voltage
All Diffused Junctions for Greater Parameter Uniformity
Glass Passivated for Greater Stability
Absolute Maximum Ratings:
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
DRM
, V
RRM
RMS Forward Current (T
C
= +80
°
C, All Conduction Angles), I
T(RMS)
Peak Forward Surge Current (1/2 Cycle Sine Wave, 60Hz, T
J
= –40
°
to +100
°
C), I
TSM
Fusing Current (T
J
= –40
°
to +100
°
C, t = 1 to 8.3ms), I
2
t
Forward Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Voltage, V
GF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, V
GR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. V
DRM
and V
RRM
can be applied on a continuous DC basis without incurrent damage. Ratings
apply for zero or negative gate voltage. Devices should not be tested for blocking capability
in a manner such that the voltage supplied exceeds the rated blocking voltage.
400V
12.5A
200A
170A
2
s
. . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
. . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5W
0.5W
2A
19V
5V
–40
°
to +100
°
C
–40
°
to +125
°
C
1.7
°
C/W
Electrical Characteristics:
(V
D
= 400V, T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Forward Blocking Current
I
DRM
T
J
= +100
°
C
T
J
= +25
°
C
T
J
= +100
°
C
T
J
= +25
°
C
–
–
3
mA
μ
A
mA
μ
A
–
–
10
Peak Reverse Blocking Current
I
RRM
–
–
1.5
–
–
10
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