- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄363693 > NTE317 (NTE Electronics, Inc.) Silicon NPN Transistor RF Power Output PDF資料下載
參數(shù)資料
| 型號(hào)： | NTE317 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output |
| 中文描述： | 硅NPN晶體管射頻輸出功率 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | NTE317 |
NTE317
Silicon NPN Transistor
RF Power Output
Description:
The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under severe
operating conditions.
Features:
70W Minimum with Greater than 13.5dB Gain
Withstands Severe Mismatch under Operating Conditions
Emitter Ballasted
Low Inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Maximum Collector Current, I
C
Total Device Dissipation (+25
°
C), P
T
Thermal Resistance, Junction–to–Case, R
thJC
Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Electrical Characteristics:
36V
18V
4V
15A
220W
0.8
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +200
°
C
–65
°
to +200
°
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 50mA, I
B
= 0, Note 1
Collector–Emitter Breakdown Voltage V
(BR)CES
Emitter–Base Breakdown Voltage
18
–
–
V
I
C
= 20mA, V
BE
= 0, Note 1
V
(BR)EBO
I
E
= 5mA, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
h
FE
V
CE
= 5V, I
C
= 5A
f
t
V
CE
= 13.5V, I
C
= 100mA
C
ob
V
CB
= 12.5V, I
C
= 0,
–F
O
= 1.0MHz
P
O
30MHz/12.5V
P
g
36
–
–
V
4
–
–
V
Collector Cut–Off Current
–
–
3
mA
DC Current Gain
10
–
–
Gain Bandwidth
200
–
–
MHz
Output Capacitance
–
300
–
pF
Amplifier Power Out
70
–
–
W
Amplifier Power Gain
13.5
14.2
–
dB
Note 1. Pulsed through 25mH Inductor
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE3183 | Discrete Blue LED Indicators |
| NTE3184 | Discrete Blue LED Indicators |
| NTE3186 | Discrete Blue LED Indicators |
| NTE3187 | Discrete Blue LED Indicators |
| NTE3188 | Discrete White Clear LED Indicator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE318 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 36V IC=6A PO=50W CB AND RF POWER OUTPUT 制造商:NTE Electronics 功能描述:TRANSISTOR,BJT,NPN,36V V(BR)CEO,6A I(C),SOT-121 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 6A 4-Pin |
| NTE3180 | 制造商:NTE Electronics 功能描述:LED Uni-Color Red 568nm 5-Pin |
| NTE3181 | 制造商:NTE Electronics 功能描述:LED GREEN 12.7MM X 6.35MM RECTANGULAR |
| NTE3182 | 制造商:NTE Electronics 功能描述:LED Uni-Color Yellow 565nm 5-Pin |
| NTE3183 | 制造商:NTE Electronics 功能描述:LED Uni-Color Blue 430nm 2-Pin |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。