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參數(shù)資料
| 型號： | NTE3035A |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Phototransistor Detector |
| 中文描述： | 光電探測器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE3035A |
NTE3035A
Phototransistor Detector
Description:
The NTE3035A is designed for a wide variety of industrial processing and control applications requir-
ing a sensitive detector. The NTE3034A is is an identical package and is designed to be used with
the NTE3029A infrared emitter.
Features:
Miniature, Low Profile, Clear Plastic Package
Designed for Automatic Handling and Accurate Positioning
Side Looking, with Molded Lens
High Volume, Economical
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case, 5sec max., Note 2), T
L
60V
150mW
2mW/
°
C
–40
°
to +100
°
C
–40
°
to +100
°
C
. . . . . . . . . .
+260
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Dark Current
Collector–Emitter Breakdown Voltage
Capacitance
Symbol
I
D
V
(BR)CEO
I
C
= 10mA, H
C
ce
V
CC
= 5V, f = 1MHz
Test Conditions
V
CE
= 10V, H
Min
–
60
–
Typ
–
–
3.9
Max Unit
100
–
–
0
0
nA
V
pF
Optical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Light Current
Symbol
I
L
Test Conditions
Min
5
Typ
25
Max Unit
–
V
CE
= 5V, H = 500
μ
W/cm
2
,
λ
= 940nm
H = 500
μ
W/cm
2
, V
CC
= 5V,
R
L
= 100
mA
Turn–On Time
Turn–Off Time
Saturation Voltage
t
on
t
off
–
–
–
125
150
0.75
–
–
μ
s
μ
s
V
V
CE(sat)
H = 500
μ
W/cm
2
,
λ
= 940nm,
I
C
= 2mA, V
CC
= 5V
1.0
Wavelength of Maximum Sensitivity
λ
s
–
0.8
–
μ
m
Note 1. Measured with device soldered into a typical PC board.
Note 2. Heat sink should be applied to leads during soldering to prevent case temperature from ex-
ceeding +100
°
C.
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