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參數(shù)資料
| 型號： | NTE3036 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Phototransistor Silicon NPN Photo Darlington Light Detector |
| 中文描述： | 光電晶體管達林頓硅npn型光探測器照片 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE3036 |
NTE3036
Phototransistor
Silicon NPN Photo Darlington Light Detector
Description:
The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for
use in applications such as industrial inspection, processing and control, counter, sorters, switching
and logic circuit or any design requiring very high radiation sensitivity at low light levels.
Features:
Popular TO18 Type Hermetic Package for Easy Handling and Mounting
Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
Minimum Light Current: 12mA @ H = 0.5mW/cm
2
External Base for Added Control
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Light Current, I
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
40V
10V
250mA
250mW
1.43mW/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector Dark Current
I
CEO
V
CE
= 10V, H
～
0
I
C
= 100
μ
A
I
C
= 100
μ
A
I
E
= 100
μ
A
–
10
100
nA
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
50
100
–
V
Collector–Emitter Breakdown Voltage
40
80
–
V
Emitter–Base Breakdwon Voltage
10
15.5
–
V
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