參數(shù)資料
型號(hào)： NTE3040
廠商： NTE Electronics, Inc.
英文描述： Optoisolator NPN Transistor Output
中文描述： NPN晶體管輸出光隔離器
文件頁數(shù)： 1/2頁
文件大?。?/td> 20K
代理商： NTE3040
NTE3040
Optoisolator
NPN Transistor Output
Description:
The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled
with a silicon phototransistor.
Absolute Maximum Ratings:
(T
A
= +25
°
C, unless otherwise specified)
Infrared Emitting Diode
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
°
C ambient
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (Continuous), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (Peak), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulse Width 1
μ
sec, 300pps)
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW
2.6mW/
°
C
60mA
3A
3V
Phototransistor
Power Dissipation, P
D
Derate above 25
°
C ambient
Collector to Emitter Voltage, V
CEO
Collector to Base Voltage, V
CBO
Emitter to Collector Voltage, V
ECO
Collector Current (Continuous), I
C
200mW
2.6mW/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V
70V
7V
100mA
Total Device
Storage Temperature, T
stg
Operating Temperature, T
opr
Lead Soldering Temperature (10 seconds)
Surge Isolation Voltage (Input to Output)
(Peak)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
–55
°
to +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260
°
C
1500V
1060V
Electrical Characteristics:
(T
A
= +25
°
C, unless otherwise specified)
Parameter
Infrared Emitting Diode
Forward Voltage
Reverse Current
Capacitance
Symbol
Test Conditions
Min
Typ
Max
Unit
V
F
I
R
C
J
I
F
= 10mA
V
R
= 3V
V = 0, f = 1MH
Z
–
–
–
1.1
–
50
1.5
10
–
V
mA
pf
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