- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363692 > NTE3031 (NTE Electronics, Inc.) Phototransistor Detector NPN-Si, Visible & IR PDF資料下載
參數(shù)資料
| 型號： | NTE3031 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Phototransistor Detector NPN-Si, Visible & IR |
| 中文描述： | 光電探測器npn型硅，可見 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | NTE3031 |
NTE3031
Phototransistor Detector
NPN–Si, Visible & IR
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Collector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Device Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (During Soldering, 3 min), T
L
30V
5V
150mW
1.43mW/
°
C
–55
°
to +125
°
C
–65
°
to +150
°
C
+260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Static Characteristics
Collector Dark Current
Collector–Emitter Breakdown Voltage
Emitter–Collector Breakdown Voltage
Saturation Voltage
Optical Characteristics
Light Current
Photo Current Rise Time
Symbol
Test Conditions
Min
Typ
Max
Unit
I
D
V
CE
= 10V
–
–
–
–
100
–
–
–
nA
V
V
V
V
(BR)CEO
I
C
= 100
μ
A
V
(BR)ECO
I
E
= 100
μ
A
V
CE(sat)
I
C
= 0.4mA
30
5
–
0.2
I
L
t
r
V
CE
= 5V, R
L
= 100
, Note 1
R
L
= 1000
, V
CC
= 5V,
I
L
= 1mA (Peak)
1
–
–
6
–
–
mA
μ
s
Note 1. Radiation flux density (H) equal to 5mW/cm
2
emitted from a tungsten source at a color
temperature of 2875 K.
Note 2. Angular response is defined as the total included angle between the half sensitivity points
and assuming a point source.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE3033 | Infrared Photodiode |
| NTE3034A | Phototransistor Detector |
| NTE3035 | Phototransistor Detector |
| NTE3035A | Phototransistor Detector |
| NTE2549 | Silicon NPN Transistor Darlington Driver, Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE3032 | 制造商:NTE Electronics 功能描述:PHOTOTRANSISTOR/DETECTOR NPN SILICON VISIBLE & IR TO-46 DOME LENS CASE 制造商:NTE Electronics 功能描述:NPN-SI PHOTO/IR DETECTOR 制造商:NTE Electronics 功能描述:Phototransistor IR Chip Silicon NPN Transistor 3-Pin TO-18 |
| NTE3033 | 制造商:NTE Electronics 功能描述:Photodiode Module 900nm 2-Pin |
| NTE3034A | 制造商:NTE Electronics 功能描述:PHOTOTRANSISTOR/DETECTOR NPN SILICON USE WITH NTE3029A 制造商:NTE Electronics 功能描述:T-NPN-PHOTO/LIGHT DET 制造商:NTE Electronics 功能描述:Phototransistor IR Chip 2-Pin |
| NTE3035 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Phototransistor Detector |
| NTE3035A | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Phototransistor Detector |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。