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參數(shù)資料
| 型號： | NTE3027 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Infrared Emitting Diode High Speed for Remote Control |
| 中文描述： | 紅外線發(fā)光二極管的高速遠(yuǎn)程控制 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE3027 |
NTE3027
Infrared Emitting Diode
High Speed for Remote Control
Description:
The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a
clear, blue–grey tinted plastic package.
Features:
Low Forward Voltage
High Radiant Power and Radiant Intensity
Suitable for DC and High Pulse Current Operation
High Reliability
Standard T–1 3/4 (5mm) Package
Applications:
Infrared remote control and free air transmission systems with low forward voltage and comfort-
able radiation and angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Forward Current (Note 2), I
FSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Soldering Temperature (t
≤
5sec, 2mm from case), T
L
Thermal Resistance, Junction–to–Ambient, R
thJA
Note 1. t
p
= 100
μ
s, t
p
/T = 0.5
Note 2. t
p
= 100
μ
s
5V
150mA
300mA
2.5A
210mW
+100
°
C
–55
°
to +100
°
C
–55
°
to +100
°
C
+260
°
C
375K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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