參數(shù)資料
型號: NTE3028
廠商: NTE Electronics, Inc.
英文描述: Infrared Emitting Diode PN Gallium Arsenide
中文描述: 紅外發(fā)光二極管通知書砷化鎵
文件頁數(shù): 1/2頁
文件大?。?/td> 19K
代理商: NTE3028
NTE3028
Infrared Emitting Diode
PN Gallium Arsenide
Description:
The NTE3028 is designed for applications requiring high power output, low drive power, and very fast
response time. This device is used in industrial processing and control, light modulators, shaft or posi-
tion encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for
use with silicon detectors.
Features:
High Power Output
Infrared Emission
Low Drive Current
Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings:
Reverse Voltage, V
R
Forward Current, I
F
Continuous
Peak (PW = 100
μ
s, Duty Cycle = 2%)
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C (Note 1)
Operating Temperature Range, T
A
Storage Temperature Range, T
stg
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A
250mW
2.27mW/
°
C
–55
°
to +125
°
C
–65
°
to +150
°
C
Note 1. Printed circuit board mounting.
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse Leakage Current
I
R
V
R
= 3V
I
R
= 100
μ
A
I
F
= 50mA
V
R
= 0V, f = 1MHz
2
nA
Reverse Breakdown Voltage
V
(BR)R
V
F
C
T
6
20
V
Forward Voltage
1.32
1.5
V
Total Capacitance
18
pF
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