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參數(shù)資料
| 型號： | NTE2975 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125 |
| 中文描述： | MOSFET的N溝道，增強模式高速開關 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 28K |
| 代理商： | NTE2975 |
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
V
GS
= 0V, I
D
= 250
μ
A
Reference to +25
°
C, I
D
= 1mA
Min
Typ
Max
Unit
Drain
–
Source Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
55
–
–
V
Breakdown Voltage Temperature
Coefficient
–
0.057
–
V/
°
C
Static Drain
–
Source On
–
Resistance
V
GS
= 10V, I
D
= 28A, Note 6
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 25V, I
D
= 28A, Note 6
V
DS
= 55V, V
GS
= 0
V
DS
= 44V, V
GS
= 0, T
J
= +150
°
C
V
GS
= 20V
V
GS
=
–
20V
V
GS
= 10V, I
D
= 28A, V
DS
= 44V
–
–
16.5
m
V
Gate Threshold Voltage
2.0
–
4.0
Forward Transconductance
19
–
–
S
μ
A
μ
A
nA
Drain
–
Source Leakage Current
–
–
25
–
–
250
Gate
–
Source Forward Leakage Current
I
GSS
–
–
100
–
–
–
100
nA
Total Gate Charge
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
–
–
72
nC
Gate
–
Source Charge
–
–
11
nC
Gate
–
Drain (
“
Miller
”
) Charge
–
–
26
nC
Turn
–
On Delay Time
V
GS
= 10V, V
DD
= 28V, I
D
= 28A,
R
G
= 12
–
14
–
ns
Rise Time
–
76
–
ns
Turn
–
Off Delay Time
–
52
–
ns
Fall Time
–
57
–
ns
Internal Drain Inductance
Between lead, .250 (6mm) from
package and center of die contact
–
4.5
–
nH
Internal Source Inductance
–
7.5
–
nH
Input Capacitance
V
DS
= 25V, V
GS
= 0, f = 1MHz
–
1696
–
pF
Output Capacitance
–
407
–
pF
Reverse Transfer Capacitance
–
110
–
pF
Source
–
Drain Ratings and Characteristics
Continuous Source Current (Body Diode)
I
S
I
SM
–
–
53
A
Pulsed Source Current (Body Diode)
Note 2
T
J
= +25
°
C, I
S
= 28A, V
GS
= 0,
Note 6
–
–
180
A
Diode Forward Voltage
V
F(S
–
D)
–
–
1.3
V
Reverse Recovery Time
t
rr
Q
rr
t
on
T
J
= +25
°
C, I
F
= 28A,
di/dt = 100A/
s, Note 6
μ
–
67
101
ns
Reverse Recovery Charge
–
208
312
nC
Forward Turn
–
On Time
Intristic turn
–
on time is negligible
(turn
–
on is dominated by L
S
+ L
D
)
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 6. Pulse width
≤
400
μ
s, duty cycle
≤
2%.
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