參數(shù)資料
型號(hào)： NTE2975
廠商： NTE Electronics, Inc.
英文描述： Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125
中文描述： MOSFET的N溝道，增強(qiáng)模式高速開關(guān)
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 28K
代理商： NTE2975
NTE2975
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
Advanced Process Technology
Ultra Low On–State Resistance
Dynamic dv/dt Rating
+175
°
C Operating Temperature
Fast Switching
Fully Avalanche Rated
Absolute Maximum Ratings:
Drain Current, I
D
Continuous (V
GS
= 10V)
T
C
= +25
°
C (Note 1)
T
C
= +100
°
C
Pulse (Note 2)
Power Dissipation (T
C
= +25
°
C), P
D
Derate above +25
°
C
Gate–Source Voltage, V
GS
Avalanche Current (Note 2), I
AR
Repetitive Avalanche Energy (Note 2), E
AR
Single Pulse Avalanche Energy (Note 3, Note 4), E
AS
Peak Diode Recovery (Note 5), dv/dt
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
L
Maximum Thermal Resistance, Junction–to–Case, R
thJC
Typical Thermal Resistance, Case–to–Sink (Flat, greased surface), R
thCS
Maximum Thermal Resistance, Junction–to–Ambient, R
thJA
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 39A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Starting T
J
= +25
°
C, L = 389
μ
H, R
G
= 25
, I
AS
= 28A.
Note 4. This is a calculated value limited to T
J
= +175
°
C.
Note 5. I
SD
≤
28A, di/dt
≤
220A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
+175
°
C
53A
37A
180A
107W
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.71W/
°
C
±
20V
28A
11mJ
152mJ
5.0V/ns
–55
°
to +175
°
C
–55
°
to +175
°
C
+300
°
C
1.4
°
C/W
0.5
°
C/W
62
°
C/W
. . . . . . . . . . . . . . .
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