參數(shù)資料
型號(hào)： NTE2969
廠商： NTE Electronics, Inc.
英文描述： Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125
中文描述： MOSFET的N溝道，增強(qiáng)模式高速開關(guān)
文件頁數(shù)： 2/3頁
文件大?。?/td> 24K
代理商： NTE2969
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain
–
Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BV
DSS
BV/ T
J
V
GS
= 0V, I
D
= 250
μ
A
I
D
= 250
μ
A
400
–
–
V
–
0.20
–
V/
°
C
Gate Threshold Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
V
DS
= 5V, I
D
= 250
μ
A
V
GS
= 30V
V
GS
=
–
30V
V
DS
= 400V, V
GS
= 0
V
DS
= 320V, T
C
= +150
°
C
V
GS
= 10V, I
D
= 12.5A, Note 4
V
DS
= 50V, I
D
= 12.5A, Note 4
V
GS
= 0V, V
DS
= 25V, f = 1MHz
2.0
–
4.0
V
Gate
–
Source Leakage Forward
–
–
100
nA
Gate
–
Source Leakage Reverse
–
–
–
100
nA
μ
A
μ
A
mhos
Zero Gate Voltage Drain Current
–
–
10
–
–
100
Static Drain
–
Source ON Resistance
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
–
–
0.2
Forward Transconductance
–
18.91
–
Input Capacitance
–
3180
4130
pF
Output Capacitance
–
435
500
pF
Reverse Transfer Capacitance
–
200
240
pF
Turn
–
On Delay Time
V
DD
= 200V
,
I
D
= 25A, R
G
= 5.3
,
Note 4, Note 5
–
22
55
ns
Rise Time
–
22
60
ns
Turn
–
Off Delay Time
–
127
260
ns
Fall Time
–
38
85
ns
Total Gate Charge
V
GS
= 10V, I
D
= 25A, V
DS
= 320V,
Note 4, Note 5
–
140
182
nC
Gate
–
Source Charge
–
21
–
nC
Gate
–
Drain (
“
Miller
”
) Charge
–
64.8
–
nC
Source
–
Drain Diode Ratings and Characteristics
Continuous Source Current
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
–
–
25
A
Pulse Source Current
(Body Diode) Note 1
T
J
= +25
°
C, I
S
= 25A, V
GS
= 0V, Note 4
T
J
= +25
°
C, I
F
= 25A, dI
F
/dt = 100A/
μ
s
–
–
100
A
Diode Forward Voltage
–
–
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
–
484
–
ns
μ
C
–
7.6
–
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2%.
Note 5. Essentially independent of operating temperature.
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