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參數(shù)資料
| 型號： | NTE2936 |
| 廠商： | NTE Electronics, Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE2936 |
NTE2936
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower R
DS
(on): 0.308
Typ
Lower Leakage Current: 10
μ
A (Max) @ V
DS
= 500V
Absolute Maximum Ratings:
Drain–to–Source Voltage, V
DSS
Drain Current, I
D
Continuous
T
C
= +25
°
C
T
C
= +100
°
C
Pulsed (Note 1)
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Gate–Source Voltage, V
GS
Single Pulsed Avalanche Energy (Note 2), E
AS
Avalanche Current (Note 1), I
AR
Repetitive Avalanche Energy (Note 1), E
AR
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
L
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 20mH, I
AS
= 9.6A, V
DD
= 50V, R
G
= 27
, Starting T
J
= +25
°
C.
Note 3. I
SD
≤
14A, di/dt
≤
230A/
μ
s, V
DD
≤
V
(BR)DSS
, Starting T
J
= +25
°
C.
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.6A
6.1A
56A
96W
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0.77W/
°
C
±
30V
1024mJ
9.6A
9.6mJ
3.5V/ns
–55
°
to +150
°
C
–55
°
to +150
°
C
+300
°
C
1.3
°
C/W
40
°
C/W
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