- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363691 > NTE293 (NTE Electronics, Inc.) Silicon Complementary Transistors Audio Amplifier and Driver PDF資料下載
參數(shù)資料
| 型號： | NTE293 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Audio Amplifier and Driver |
| 中文描述： | 硅互補晶體管音頻放大器和驅動程序 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE293 |
NTE293 (NPN) & NTE294 (PNP)
Silicon Complementary Transistors
Audio Amplifier and Driver
Description:
The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type
package designed for use in low–frequency power amplification and drive applications.
Features:
Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V
50V
5V
1A
1.5A
1W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
C
= 500mA, Note 2
V
CE
= 5V, I
B
= 1A, Note 2
I
C
= 500mA, I
B
= 50mA, Note 2
I
C
= 500mA, I
B
= 50mA, Note 2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
e
= 0, f = 1MHz
60
–
–
V
Collector–Emitter Breakdown Voltage
50
–
–
V
Emitter–Base Breakdown Voltage
5
–
–
V
μ
A
Collector Cutoff Current
–
–
0.1
DC Current Gain
120
–
240
50
100
–
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
f
T
C
ob
–
0.2
0.4
V
Base–Emitter Saturation Voltage
–
0.85
1.2
V
Current–Gain Bandwidth Product
–
200
–
MHz
Collector Output Capacitance
–
11
20
pF
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 2. Pulse measurement.
相關PDF資料 |
PDF描述 |
|---|---|
| NTE2941 | MOSFET N-Ch, Enhancement Mode High Speed Switch |
| NTE2942 | 30V N-Channel PowerTrench MOSFET |
| NTE2943 | 30V N-Channel PowerTrench MOSFET |
| NTE2944 | 30V N-Channel PowerTrench MOSFET |
| NTE2945 | SM DIO/SMBJ12A SMB UNI-DIR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2930 | 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 100V ID=31A TO-3PL CASE HIGH SPEED SWITCH |
| NTE2931 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:MOSFET N-Channel, Enhancement Mode High Speed Switch |
| NTE2932 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:MOSFET N-Channel, Enhancement Mode High Speed Switch |
| NTE2933 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:MOSFET N-Channel, Enhancement Mode High Speed Switch |
| NTE2934 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:MOSFET N-Channel, Enhancement Mode High Speed Switch |
發(fā)布緊急采購，3分鐘左右您將得到回復。