參數(shù)資料
型號(hào): NTE2941
廠商: NTE Electronics, Inc.
英文描述: MOSFET N-Ch, Enhancement Mode High Speed Switch
中文描述: MOSFET的N溝道,增強(qiáng)模式高速開(kāi)關(guān)
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 25K
代理商: NTE2941
NTE2941
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
Low Static Drain–Source ON Resistance
Improved Inductive Ruggedness
Fast Switching Times
Low Input Capacitance
Extended Safe Operating Area
TO220 Type Isolated Package
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), V
DSS
Drain–Gate Voltage (R
GS
= 1M
, Note 1), V
DGR
Gate–Source Voltage, V
GS
Drain Current, I
D
Continuous
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 2)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current (Pulsed), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 3), E
AS
Avalanche Current, I
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
L
Thermal Resistance:
Maximum Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
thCS
Maximum Junction–to–Ambient (Free Air Operation), R
thJA
60V
60V
±
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28A
19.6A
200A
±
1.5A
48mJ
28A
48W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.52W/
°
C
–55
°
to +175
°
C
–55
°
to +175
°
C
+300
°
C
. . . . . . . . . . . . . .
1.92K/W
0.5K/W
62.5K/W
. . . . . . .
. . . . . . . . . . . . . . . . . . . .
Note 1. T
J
= +25
°
to +175
°
C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 50
μ
H, V
DD
= 25V, R
G
= 25
, Starting T
J
= +25
°
C.
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