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參數(shù)資料
| 型號(hào)： | NTE2592 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Horizontal Output for HDTV |
| 中文描述： | 硅NPN晶體管輸出的高清晰度電視水平 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE2592 |
NTE2592
Silicon NPN Transistor
Horizontal Output for HDTV
Features:
High Breakdown Voltage: V
(BR)CBO
= 2000V Min
Isolated TO220 Type Package
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, R
thJC
2000V
1800V
5V
15mA
50mA
2W
+150
°
C
–55
°
to +150
°
C
8.3
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Output Capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
V
(BR)CEO
I
C
= 100
μ
A, R
BE
=
∞
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
C
ob
V
CB
= 100V, f = 1MHz
Test Conditions
V
CB
= 1800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 300
μ
A
V
CE
= 10V, I
C
= 300
μ
A
I
C
= 600
μ
A, I
B
= 120
μ
A
I
C
= 600
μ
A, I
B
= 120
μ
A
Min
–
–
10
–
–
–
2000
1800
5
–
Typ
–
Max
1
1
60
–
5
2
–
–
–
–
Unit
μ
A
μ
A
–
6
–
–
–
–
–
MHz
V
V
V
V
V
pF
1.8
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