參數(shù)資料
型號(hào)： NTE2585
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-CFP -55 to 125
中文描述： 硅NPN晶體管高壓放大器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 18K
代理商： NTE2585
NTE2585
Silicon NPN Transistor
High Voltage Amplifier
Features:
High Breakdown Voltage
Low Output Capacitance
High Reliability
Intended for High–Density Mounting (Suitable for Sets Whose Height is Restricted)
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V
800V
7V
20mA
60mA
1.65W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 2mA
V
CB
= 100V, f = 1MHz
I
C
= 10mA, I
B
= 2mA
I
C
= 10mA, I
B
= 2mA
Min
–
–
20
10
–
–
–
–
800
800
7
Typ
–
–
–
–
40
1.6
–
–
–
–
–
Max
1
1
50
–
–
–
1.0
1.5
–
–
–
Unit
μ
A
μ
A
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
Collector Emitter Breakdown Voltage V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
Emitter Base Breakdown Voltage
f
T
MHz
pF
V
V
V
V
V
C
ob
V
CE(sat)
V
BE(sat)
V
(BR)EBO
I
E
= 100
μ
A, I
C
= 0
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